A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy

A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy

In this work, the effects of arsenic (As) flux used during gallium (Ga) seed droplet consumption and the post-growth annealing on the optical, electrical, and microstructural properties of self-catalyzed molecular beam epitaxially grown tellurium (Te)-doped GaAs nanowires (NWs) have been investigate...

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Bibliographic Details
Main Authors: Shisir Devkota, Mehul Parakh, Priyanka Ramaswamy, Hirandeep Kuchoor, Aubrey Penn, Lewis Reynolds, Shanthi Iyer
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Catalysts
Subjects:
nanowires
molecular beam epitaxy (MBE)
Te-doping
droplet conumption
in-situ annealing
acceptor states
Online Access:https://www.mdpi.com/2073-4344/12/5/451

Internet

https://www.mdpi.com/2073-4344/12/5/451

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