Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT-IR) in vacuum are presented in this work. The growth of GaN thin films was done on a variety of substrates like silicon, sapphire and fused silica. Room temperature PL spectra of all the GaN films sh...

Full description

Bibliographic Details
Main Authors: Luis A. Hernández, Gerardo Contreras-Puente, Francisco de Moure, Máximo López-López, Adolfo Escamilla-Esquivel, B. Marel Monroy, Jorge Aguilar-Hernández, Rogelio Mendoza-Pérez, Osvaldo de Melo, Guillermo Santana
Format: Article
Language:English
Published: MDPI AG 2013-03-01
Series:Materials
Subjects:
solar cells
infrared-CSVT
GaN
photoluminescence
thin films
Online Access:http://www.mdpi.com/1996-1944/6/3/1050

Internet

http://www.mdpi.com/1996-1944/6/3/1050

Similar Items