Resistive switching properties in polycrystalline LiNbO3 thin films

Resistive switching properties in polycrystalline LiNbO3 thin films

LiNbO _3 (LNO) is currently intensively studied as an important ferroelectric material. In this work, polycrystalline LNO films were prepared through a sputtering technique, and their ferroelectricity-related resistive switching property was investigated using a device structure of PtSi/SiO _2 /LNO/...

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Bibliographic Details
Main Authors: Gongying Chen, Chao Zeng, Ye Liao, Wei Huang, Jianyuan Wang, Guangyang Lin, Cheng Li, Songyan Chen
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Applied Physics Express
Subjects:
LiNbO3
domain wall conductivity
resistive switching
memristor
Online Access:https://doi.org/10.35848/1882-0786/ad3f6d

Internet

https://doi.org/10.35848/1882-0786/ad3f6d

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