The Influence of Deposition Temperature and Material Stress on Low-Loss Silicon Nitride Films for Integrated Quantum Optics

The Influence of Deposition Temperature and Material Stress on Low-Loss Silicon Nitride Films for Integrated Quantum Optics

We report on an optimization procedure for depositing low-loss silicon nitride films at temperatures of 760 °C and 820 °C using low-pressure chemical vapor deposition. They were characterized in terms of quality and compositional proximity to stoichiometric silicon nitride. Fil...

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Bibliographic Details
Main Authors: Abubaker M. Tareki, Connor Kupchak, Khaled Mnaymneh
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Photonics Journal
Subjects:
Film deposition
film stress
microfabrication
nanotechnology
nonlinear refractive index
silicon nitride
Online Access:https://ieeexplore.ieee.org/document/10146373/

Internet

https://ieeexplore.ieee.org/document/10146373/

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