Suppression of crack formation in wafer-scale amorphous SiNx films by residual hydrogen-ligands manipulation
Plasma-Enhanced Chemical Vapor Deposition (PECVD) of amorphous silicon nitride (SiNx) thin films is a critical procedure in microelectronics serving as a surface passivation layer and dielectric barrier. However, intrinsic film stress continuously builds up along with PECVD growth, leading to film c...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-09-01
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| Series: | Nano Trends |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666978124000151 |