Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3

Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3

Abstract The rectification of the Pt/amorphous Al2O3 (a‐AO)/Nb‐doped SrTiO3 (NSTO) structure with excellent applicability as a selector for crossbar array resistive switching random access memory is introduced. The maximum forward/reverse current ratio exceeds 106, and the nonlinearity is also as hi...

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Bibliographic Details
Main Authors: Taehwan Moon, Hyun Jae Lee, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Yong Bin Lee, Baek Su Kim, Cheol Seong Hwang
Format: Article
Language:English
Published: Wiley-VCH 2018-12-01
Series:Advanced Electronic Materials
Subjects:
barrier height
diodes
Nb‐doped SrTiO3
positive temperature coefficient of resistance
Online Access:https://doi.org/10.1002/aelm.201800388

Internet

https://doi.org/10.1002/aelm.201800388

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