Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3
Abstract The rectification of the Pt/amorphous Al2O3 (a‐AO)/Nb‐doped SrTiO3 (NSTO) structure with excellent applicability as a selector for crossbar array resistive switching random access memory is introduced. The maximum forward/reverse current ratio exceeds 106, and the nonlinearity is also as hi...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2018-12-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.201800388 |
| _version_ | 1797663926359425024 |
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| author | Taehwan Moon Hyun Jae Lee Keum Do Kim Young Hwan Lee Seung Dam Hyun Hyeon Woo Park Yong Bin Lee Baek Su Kim Cheol Seong Hwang |
| author_facet | Taehwan Moon Hyun Jae Lee Keum Do Kim Young Hwan Lee Seung Dam Hyun Hyeon Woo Park Yong Bin Lee Baek Su Kim Cheol Seong Hwang |
| author_sort | Taehwan Moon |
| collection | DOAJ |
| description | Abstract The rectification of the Pt/amorphous Al2O3 (a‐AO)/Nb‐doped SrTiO3 (NSTO) structure with excellent applicability as a selector for crossbar array resistive switching random access memory is introduced. The maximum forward/reverse current ratio exceeds 106, and the nonlinearity is also as high as 106 at room temperature. The barrier height at the a‐AO/NSTO interface is investigated via X‐ray photoelectron spectroscopy and is found to be 1.57 eV. The expected conduction mechanism is trap‐assisted tunneling in the forward bias condition. The barrier height at the Pt/a‐AO interface is examined by fitting the current–voltage results at various temperatures according to the Fowler–Nordheim transport mechanism, under the reverse bias condition, and it is found to be 2.75 eV. Moreover, the temperature dependence measurement of the current–voltage characteristics exhibits the positive temperature coefficient of resistance (PTCR) effect in reverse bias. This PTCR effect can be understood from the electron trapping of the acceptor‐like states at the a‐AO/NSTO interface with increasing temperature. The involvement of the PTCR effect under the reverse bias condition and the slight increase in the forward current further enhance the diode performance up to 107 at 70 °C, which is the highly promising performance of the present structure. |
| first_indexed | 2024-03-11T19:21:51Z |
| format | Article |
| id | doaj.art-2dd0d59d75a04740bcfcedfdb1f5aa0b |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T19:21:51Z |
| publishDate | 2018-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-2dd0d59d75a04740bcfcedfdb1f5aa0b2023-10-07T03:29:12ZengWiley-VCHAdvanced Electronic Materials2199-160X2018-12-01412n/an/a10.1002/aelm.201800388Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3Taehwan Moon0Hyun Jae Lee1Keum Do Kim2Young Hwan Lee3Seung Dam Hyun4Hyeon Woo Park5Yong Bin Lee6Baek Su Kim7Cheol Seong Hwang8Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of KoreaAbstract The rectification of the Pt/amorphous Al2O3 (a‐AO)/Nb‐doped SrTiO3 (NSTO) structure with excellent applicability as a selector for crossbar array resistive switching random access memory is introduced. The maximum forward/reverse current ratio exceeds 106, and the nonlinearity is also as high as 106 at room temperature. The barrier height at the a‐AO/NSTO interface is investigated via X‐ray photoelectron spectroscopy and is found to be 1.57 eV. The expected conduction mechanism is trap‐assisted tunneling in the forward bias condition. The barrier height at the Pt/a‐AO interface is examined by fitting the current–voltage results at various temperatures according to the Fowler–Nordheim transport mechanism, under the reverse bias condition, and it is found to be 2.75 eV. Moreover, the temperature dependence measurement of the current–voltage characteristics exhibits the positive temperature coefficient of resistance (PTCR) effect in reverse bias. This PTCR effect can be understood from the electron trapping of the acceptor‐like states at the a‐AO/NSTO interface with increasing temperature. The involvement of the PTCR effect under the reverse bias condition and the slight increase in the forward current further enhance the diode performance up to 107 at 70 °C, which is the highly promising performance of the present structure.https://doi.org/10.1002/aelm.201800388barrier heightdiodesNb‐doped SrTiO3positive temperature coefficient of resistance |
| spellingShingle | Taehwan Moon Hyun Jae Lee Keum Do Kim Young Hwan Lee Seung Dam Hyun Hyeon Woo Park Yong Bin Lee Baek Su Kim Cheol Seong Hwang Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3 Advanced Electronic Materials barrier height diodes Nb‐doped SrTiO3 positive temperature coefficient of resistance |
| title | Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3 |
| title_full | Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3 |
| title_fullStr | Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3 |
| title_full_unstemmed | Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3 |
| title_short | Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3 |
| title_sort | diode property and positive temperature coefficient of resistance of pt al2o3 nb srtio3 |
| topic | barrier height diodes Nb‐doped SrTiO3 positive temperature coefficient of resistance |
| url | https://doi.org/10.1002/aelm.201800388 |
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