Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3
Abstract The rectification of the Pt/amorphous Al2O3 (a‐AO)/Nb‐doped SrTiO3 (NSTO) structure with excellent applicability as a selector for crossbar array resistive switching random access memory is introduced. The maximum forward/reverse current ratio exceeds 106, and the nonlinearity is also as hi...
Main Authors: | Taehwan Moon, Hyun Jae Lee, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Yong Bin Lee, Baek Su Kim, Cheol Seong Hwang |
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Format: | Article |
Language: | English |
Published: |
Wiley-VCH
2018-12-01
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Series: | Advanced Electronic Materials |
Subjects: | |
Online Access: | https://doi.org/10.1002/aelm.201800388 |
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