Evolution of nanoripples on silicon by gas cluster-ion irradiation

Evolution of nanoripples on silicon by gas cluster-ion irradiation

Si wafers of (100), (110) and (111) orientations were bombarded by gas cluster ion beam (GCIB) of 3000 Ar-atoms/cluster on average at a series of angles. Similar surface morphology ripples developed in different nanoscales. A simple scaling functional satisfactorily describe the roughness and wavele...

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Bibliographic Details
Main Authors: Omar Lozano, Q. Y. Chen, B. P. Tilakaratne, H. W. Seo, X. M. Wang, P. V. Wadekar, P. V. Chinta, L. W. Tu, N. J. Ho, D. Wijesundera, W. K. Chu
Format: Article
Language:English
Published: AIP Publishing LLC 2013-06-01
Series:AIP Advances
Online Access:http://link.aip.org/link/doi/10.1063/1.4811171

Internet

http://link.aip.org/link/doi/10.1063/1.4811171

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