Active elimination of DC bias current of a SiC based dual active bridge by controlling the dead time period
Abstract Dual active bridge (DAB) is an isolated DC‐DC converter gaining wider attention in power electronics applications. The high frequency (HF) transformer is an integral part of the DAB which is prone to saturation. Silicon carbide (SiC) based DAB are generally preferred for highly efficient po...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
Wiley
2024-11-01
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Series: | IET Power Electronics |
Subjects: | |
Online Access: | https://doi.org/10.1049/pel2.12753 |