Active elimination of DC bias current of a SiC based dual active bridge by controlling the dead time period

Abstract Dual active bridge (DAB) is an isolated DC‐DC converter gaining wider attention in power electronics applications. The high frequency (HF) transformer is an integral part of the DAB which is prone to saturation. Silicon carbide (SiC) based DAB are generally preferred for highly efficient po...

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Bibliographic Details
Main Authors: Ganesan Perumal, Kamalesh Hatua, Manju Rajagopal
Format: Article
Language:English
Published: Wiley 2024-11-01
Series:IET Power Electronics
Subjects:
Online Access:https://doi.org/10.1049/pel2.12753