Algorithmic Optimization of Transistors Applied to Silicon LDMOS

Algorithmic Optimization of Transistors Applied to Silicon LDMOS

We propose a pioneering approach that integrates optimization algorithms and technology computer-aided design to automatically optimize laterally-diffused metal-oxide-semiconductors (LDMOS) with a field-oxide structure. We define the ratio of the square of the breakdown voltage divided by the specif...

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Bibliographic Details
Main Authors: Ping-Ju Chuang, Ali Saadat, Maarten L. Van De Put, Hal Edwards, William G. Vandenberghe
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Bayesian optimization
LDMOS
nelder-mead algorithm
power semiconductor device
powell algorithm
step gate field oxide structure
Online Access:https://ieeexplore.ieee.org/document/10155324/

Internet

https://ieeexplore.ieee.org/document/10155324/

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