TCAD Modelling of Magnetic Hall Effect Sensors
In this paper, a gallium nitride (GaN) magnetic Hall effect current sensor is simulated in 2D and 3D using the TCAD Sentaurus simulation toolbox. The model takes into account the piezoelectric polarization effect and the Shockley–Read–Hall (SRH) and Fermi–Dirac statistics for all simulations. The ga...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-07-01
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| Series: | Inventions |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2411-5134/9/4/72 |