Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>-Based Charge Trapping Layers

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>-Based Charge Trapping Layers

Flash memories are the preferred choice for data storage in portable gadgets. The charge trapping nonvolatile flash memories are the main contender to replace standard floating gate technology. In this work, we investigate metal/blocking oxide/high-k charge trapping layer/tunnel oxide/Si (MOHOS) str...

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Bibliographic Details
Main Authors: Dencho Spassov, Albena Paskaleva, Elżbieta Guziewicz, Wojciech Wozniak, Todor Stanchev, Tsvetan Ivanov, Joanna Wojewoda-Budka, Marta Janusz-Skuza
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Materials
Subjects:
nonvolatile memory
charge trapping
atomic layer deposition (ALD)
HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> nanolaminates
Al-doped HfO<sub>2</sub>
TEM characterization
Online Access:https://www.mdpi.com/1996-1944/15/18/6285

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https://www.mdpi.com/1996-1944/15/18/6285

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