Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

This study proposes the High- κ dielectric Trench Shielded power UMOSFET (HK TS-UMOSFET) to be assessed using the two-dimensional numerical simulations. The simulations are employed to evaluate HK TS-UMOSFETs susceptibility to single-event burnout (SEB) mechanism. Based on the findings, the influenc...

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Bibliographic Details
Main Authors: Saranya Krishnamurthy, Ramani Kannan, Fawnizu Azmadi Hussin
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:Materials Research Express
Subjects:
single event burnout (SEB)
high-κ dielectric
P+ shielding region
SEB hardening
U-shaped trench-gate MOSFET (UMOSFET)
silvaco TCAD simulation
Online Access:https://doi.org/10.1088/2053-1591/ab816a

Internet

https://doi.org/10.1088/2053-1591/ab816a

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