Error Correction for TLC and QLC NAND Flash Memories Using Cell-Wise Encoding
The growing error rates of triple-level cell (TLC) and quadruple-level cell (QLC) NAND flash memories have led to the application of error correction coding with soft-input decoding techniques in flash-based storage systems. Typically, flash memory is organized in pages where the individual bits per...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-05-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/10/1585 |