Error Correction for TLC and QLC NAND Flash Memories Using Cell-Wise Encoding
The growing error rates of triple-level cell (TLC) and quadruple-level cell (QLC) NAND flash memories have led to the application of error correction coding with soft-input decoding techniques in flash-based storage systems. Typically, flash memory is organized in pages where the individual bits per...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-05-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/10/1585 |
| _version_ | 1797500285903437824 |
|---|---|
| author | Daniel Nicolas Bailon Johann-Philipp Thiers Jürgen Freudenberger |
| author_facet | Daniel Nicolas Bailon Johann-Philipp Thiers Jürgen Freudenberger |
| author_sort | Daniel Nicolas Bailon |
| collection | DOAJ |
| description | The growing error rates of triple-level cell (TLC) and quadruple-level cell (QLC) NAND flash memories have led to the application of error correction coding with soft-input decoding techniques in flash-based storage systems. Typically, flash memory is organized in pages where the individual bits per cell are assigned to different pages and different codewords of the error-correcting code. This page-wise encoding minimizes the read latency with hard-input decoding. To increase the decoding capability, soft-input decoding is used eventually due to the aging of the cells. This soft-decoding requires multiple read operations. Hence, the soft-read operations reduce the achievable throughput, and increase the read latency and power consumption. In this work, we investigate a different encoding and decoding approach that improves the error correction performance without increasing the number of reference voltages. We consider TLC and QLC flashes where all bits are jointly encoded using a Gray labeling. This cell-wise encoding improves the achievable channel capacity compared with independent page-wise encoding. Errors with cell-wise read operations typically result in a single erroneous bit per cell. We present a coding approach based on generalized concatenated codes that utilizes this property. |
| first_indexed | 2024-03-10T03:59:43Z |
| format | Article |
| id | doaj.art-2e92c15b464c4a248cffe598a7abcf28 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T03:59:43Z |
| publishDate | 2022-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-2e92c15b464c4a248cffe598a7abcf282023-11-23T10:47:21ZengMDPI AGElectronics2079-92922022-05-011110158510.3390/electronics11101585Error Correction for TLC and QLC NAND Flash Memories Using Cell-Wise EncodingDaniel Nicolas Bailon0Johann-Philipp Thiers1Jürgen Freudenberger2Institute for System Dynamics (ISD), HTWG Konstanz, University of Applied Sciences, 78462 Konstanz, GermanyInstitute for System Dynamics (ISD), HTWG Konstanz, University of Applied Sciences, 78462 Konstanz, GermanyInstitute for System Dynamics (ISD), HTWG Konstanz, University of Applied Sciences, 78462 Konstanz, GermanyThe growing error rates of triple-level cell (TLC) and quadruple-level cell (QLC) NAND flash memories have led to the application of error correction coding with soft-input decoding techniques in flash-based storage systems. Typically, flash memory is organized in pages where the individual bits per cell are assigned to different pages and different codewords of the error-correcting code. This page-wise encoding minimizes the read latency with hard-input decoding. To increase the decoding capability, soft-input decoding is used eventually due to the aging of the cells. This soft-decoding requires multiple read operations. Hence, the soft-read operations reduce the achievable throughput, and increase the read latency and power consumption. In this work, we investigate a different encoding and decoding approach that improves the error correction performance without increasing the number of reference voltages. We consider TLC and QLC flashes where all bits are jointly encoded using a Gray labeling. This cell-wise encoding improves the achievable channel capacity compared with independent page-wise encoding. Errors with cell-wise read operations typically result in a single erroneous bit per cell. We present a coding approach based on generalized concatenated codes that utilizes this property.https://www.mdpi.com/2079-9292/11/10/1585non-volatile memorychannel capacityerror correction codingconcatenated codes |
| spellingShingle | Daniel Nicolas Bailon Johann-Philipp Thiers Jürgen Freudenberger Error Correction for TLC and QLC NAND Flash Memories Using Cell-Wise Encoding Electronics non-volatile memory channel capacity error correction coding concatenated codes |
| title | Error Correction for TLC and QLC NAND Flash Memories Using Cell-Wise Encoding |
| title_full | Error Correction for TLC and QLC NAND Flash Memories Using Cell-Wise Encoding |
| title_fullStr | Error Correction for TLC and QLC NAND Flash Memories Using Cell-Wise Encoding |
| title_full_unstemmed | Error Correction for TLC and QLC NAND Flash Memories Using Cell-Wise Encoding |
| title_short | Error Correction for TLC and QLC NAND Flash Memories Using Cell-Wise Encoding |
| title_sort | error correction for tlc and qlc nand flash memories using cell wise encoding |
| topic | non-volatile memory channel capacity error correction coding concatenated codes |
| url | https://www.mdpi.com/2079-9292/11/10/1585 |
| work_keys_str_mv | AT danielnicolasbailon errorcorrectionfortlcandqlcnandflashmemoriesusingcellwiseencoding AT johannphilippthiers errorcorrectionfortlcandqlcnandflashmemoriesusingcellwiseencoding AT jurgenfreudenberger errorcorrectionfortlcandqlcnandflashmemoriesusingcellwiseencoding |