RBS-study of GexSi1-x Compounds Formed by Variable Dose Ge Implantation into Si Wafers

RBS-study of GexSi1-x Compounds Formed by Variable Dose Ge Implantation into Si Wafers

Amorphous and relaxed epitaxial GeSi films are prepared by Ge-implantation into Si(111) wafers of both 60 keV and 200 keV energetic Ge+-ions with appropriate dose, followed by post-implantation thermal annealing, comprising a single final annealing at a temperature of 900 °C. The implantation dose w...

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Bibliographic Details
Main Authors: Ramírez A., Zehe A., Thomas A.
Format: Article
Language:English
Published: Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) 2002-01-01
Series:Materials Research
Subjects:
Germanium implantation
solid phase epitaxy
Rutherford backscattering
sige/si
heterostructure
Online Access:http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392002000200017

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http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392002000200017

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