RESEARCH OF INTERRELATION OF A DESIGN AND MANUFACTURING TECHNIQUES OF SEMI-CONDUCTOR DEVICES WITH THEIR PENETRATIVE PRESSURE
The estimation of influence of a design and technology of formation of transistor structure on value of penetrative pressure is spent. Dependences in SAD TCAD Synopsys for penetrative pressure from size of a superficial charge of various designs of the transistor are received.
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| Format: | Article |
| Language: | Russian |
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Dagestan State Technical University
2016-07-01
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| Series: | Вестник Дагестанского государственного технического университета: Технические науки |
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| Online Access: | https://vestnik.dgtu.ru/jour/article/view/24 |