Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si) wafers, we examine the rate constant Rde of the permanent deactivation process of the boron-oxygen-related defect center as a function of the illumination intensity I at 170°C. While...
| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
AIP Publishing LLC
2017-03-01
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| Colecção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/1.4978266 |