Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

The combination of scanning tunnelling microscopy (STM) and non-contact atomic force microscopy (nc-AFM) allows enhanced extraction and correlation of properties not readily available via a single imaging mode. We demonstrate this through the characterization and classification of several commonly f...

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Bibliographic Details
Main Authors: Jeremiah Croshaw, Thomas Dienel, Taleana Huff, Robert Wolkow
Format: Article
Language:English
Published: Beilstein-Institut 2020-09-01
Series:Beilstein Journal of Nanotechnology
Subjects:
atomic force microscopy
hydrogen-terminated silicon
scanning tunnelling hydrogen microscopy
scanning tunnelling microscopy
surface metrology
Online Access:https://doi.org/10.3762/bjnano.11.119

Internet

https://doi.org/10.3762/bjnano.11.119

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