High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response

High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response

Group III–V semiconductors with direct band gaps have become crucial for optoelectronic and microelectronic applications. Exploring these materials for spintronic applications is an important direction for many research groups. In this study, pure and cobalt doped GaN nanowires were grown on the Si...

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Bibliographic Details
Main Authors: Mudassar Maraj, Ghulam Nabi, Khurram Usman, Engui Wang, Wenwang Wei, Yukun Wang, Wenhong Sun
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Materials
Subjects:
GaN
semiconductor
cobalt doping
photoluminescence
ferromagnetism
spintronics
Online Access:https://www.mdpi.com/1996-1944/13/16/3537

Internet

https://www.mdpi.com/1996-1944/13/16/3537

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