Static and Small-Signal Modeling of Radiofrequency Hexagonal Boron Nitride Switches

Static and Small-Signal Modeling of Radiofrequency Hexagonal Boron Nitride Switches

A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is presented. The I-V characteristics intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolati...

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Bibliographic Details
Main Authors: Anibal Pacheco-Sanchez, Omar Jordan-Garcia, Eloy Ramirez-Garcia, David Jimenez
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
RF switch
2D
hBN
insertion loss
isolation
resistive switching
Online Access:https://ieeexplore.ieee.org/document/10105453/

Internet

https://ieeexplore.ieee.org/document/10105453/

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