Infrared Insight into the Network of Hydrogenated Amorphous and Polycrystalline Silicon thin Films
IR measurements were carried out on both amorphous and polycrystalline silicon samples deposited by PECVDon glass substrate. The transition from amorphous to polycrystalline phase was achieved by increasing dilution of silaneplasma at the deposition process. The samples were found to be mixed phase...
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| Format: | Article |
| Language: | English |
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VSB-Technical University of Ostrava
2006-01-01
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| Series: | Advances in Electrical and Electronic Engineering |
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| Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/228 |
| Summary: | IR measurements were carried out on both amorphous and polycrystalline silicon samples deposited by PECVDon glass substrate. The transition from amorphous to polycrystalline phase was achieved by increasing dilution of silaneplasma at the deposition process. The samples were found to be mixed phase materials. Commonly, infrared spectra ofhydrogenated silicon thin films yield information about microstructure, hydrogen content and hydrogen bonding to silicon. Inthis paper, additional understanding was retrieved from infrared response. Applying standard optical laws, effective mediatheory and Clausius-Mossoti approach concerning the Si-Si and Si-H bonds under IR irradiation as individual oscillators,refractive indices in the long wavelength limit, crystalline, amorphous and voids volume fractions and the mass density of thefilms were determined. The mass density was found to decrease with increasing crystalline volume fraction, which can beattributed to the void-dominated mechanism of network formation. |
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| ISSN: | 1336-1376 1804-3119 |