A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection

A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection

To cope with the much narrower ESD design window in 28 nm CMOS technology, a novel diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for ESD protection is proposed in this paper. Compared with the traditional DTSCR, the proposed DTSCR has an enhanced current disch...

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Bibliographic Details
Main Authors: Zeen Han, Shupeng Chen, Hongxia Liu, Shulong Wang, Boyang Ma, Ruibo Chen, Xiaojun Fu
Format: Article
Language:English
Published: MDPI AG 2023-12-01
Series:Micromachines
Subjects:
electrostatic discharge (ESD) protection
DTSCR
holding voltage
current discharge
Online Access:https://www.mdpi.com/2072-666X/15/1/96

Internet

https://www.mdpi.com/2072-666X/15/1/96

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