Theoretical Study on Carrier Mobility of Hydrogenated Graphene/Hexagonal Boron-Nitride Heterobilayer

Theoretical Study on Carrier Mobility of Hydrogenated Graphene/Hexagonal Boron-Nitride Heterobilayer

Abstract Hydrogenated graphene (HG)/hexagonal boron nitride (h-BN) heterobilayer is an ideal structure for the high-performance field effect transistor. In this paper, the carrier mobilities of HG/h-BN heterobilayer are investigated based on the first-principles calculations by considering the influ...

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Bibliographic Details
Main Authors: Zhenqiang Ye, Hua Geng, Xiaoping Zheng
Format: Article
Language:English
Published: SpringerOpen 2018-11-01
Series:Nanoscale Research Letters
Subjects:
Hydrogenated graphene
Hexagonal boron nitride
Effective mass
Carrier mobility
Online Access:http://link.springer.com/article/10.1186/s11671-018-2780-2

Internet

http://link.springer.com/article/10.1186/s11671-018-2780-2

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