Short circuit detection and driving control with no blanking time for high voltage high power insulated gate bipolar transistors

Short circuit detection and driving control with no blanking time for high voltage high power insulated gate bipolar transistors

Abstract Insulated gate bipolar transistors (IGBT) short‐circuit (SC) protection is one of the most important protection methods for IGBT converter equipment. The fast detection and protection response time could reduce the permanent damage of devices, and extend their use life cycle. At present, th...

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Bibliographic Details
Main Authors: Xianjin Huang, Xin Li, Fengchuan Wang, Yixin Liu, Hu Sun
Format: Article
Language:English
Published: Wiley 2021-05-01
Series:IET Power Electronics
Subjects:
Bipolar transistors
Power semiconductor devices
Insulated gate field effect transistors
Semiconductor device modelling, equivalent circuits, design and testing
Power convertors and power supplies to apparatus
Online Access:https://doi.org/10.1049/pel2.12097

Internet

https://doi.org/10.1049/pel2.12097

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