Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm Substrate
Abstract The material quality of III-nitrides is severely limited by the lack of cost-effective substrates with suitable lattice and thermal expansion coefficients. A suspended ultrathin silicon membrane substrate ( $$\sim$$ ∼ 16 nm), fabricated by an easy process on SOI substrates, is thus designed...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2022-10-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-022-03732-1 |