Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO<sub>x</sub> Interfacial Layers Formed by Plasma Pre-Oxidation
For realizing of Ge complementary metal-oxide-semiconductor with a Ge gate stack with thin equivalent oxide thickness, low interface state density (D<sub>it</sub>) and high reliability. In this paper, we examine the slow trap behaviors in the ALD high-k materials including Al<sub>2...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8330012/ |