Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO<sub>x</sub> Interfacial Layers Formed by Plasma Pre-Oxidation
For realizing of Ge complementary metal-oxide-semiconductor with a Ge gate stack with thin equivalent oxide thickness, low interface state density (D<sub>it</sub>) and high reliability. In this paper, we examine the slow trap behaviors in the ALD high-k materials including Al<sub>2...
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| Format: | Article |
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IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/8330012/ |
| _version_ | 1818410545041113088 |
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| author | Mengnan Ke Mitsuru Takenaka Shinichi Takagi |
| author_facet | Mengnan Ke Mitsuru Takenaka Shinichi Takagi |
| author_sort | Mengnan Ke |
| collection | DOAJ |
| description | For realizing of Ge complementary metal-oxide-semiconductor with a Ge gate stack with thin equivalent oxide thickness, low interface state density (D<sub>it</sub>) and high reliability. In this paper, we examine the slow trap behaviors in the ALD high-k materials including Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, and La<sub>2</sub>O<sub>3</sub> on GeO<sub>x</sub>/Ge interfaces, where the GeOx interfacial layers are formed by plasma pre-oxidation. The C-V curves, Dit and slow trap density of the high-k/GeO<sub>x</sub>/nand pGe MOS capacitors are evaluated and compared. The Ge 3d spectra in X-ray photoemission spectroscopy are also compared among the Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, and La<sub>2</sub>O<sub>3</sub> on GeO<sub>x</sub>/Ge structures. It is found that Al<sub>2</sub>O<sub>3</sub> provides the lowest slow trap density for both electrons and holes in comparison with Y<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, and La<sub>2</sub>O<sub>3</sub> high-k films, while similar D<sub>it</sub> values are observed among the MOS interfaces with Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, and La<sub>2</sub>O<sub>3</sub>. The additional slow traps in the MOS capacitors with Y<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, and La<sub>2</sub>O<sub>3</sub> are attributable to any defects in the high-k films and/or the interfaces with GeO<sub>x</sub>. |
| first_indexed | 2024-12-14T10:17:13Z |
| format | Article |
| id | doaj.art-3006b86b6e4b4e458fd8a1c370efd928 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T10:17:13Z |
| publishDate | 2018-01-01 |
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| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-3006b86b6e4b4e458fd8a1c370efd9282022-12-21T23:06:45ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-01695095510.1109/JEDS.2018.28227588330012Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO<sub>x</sub> Interfacial Layers Formed by Plasma Pre-OxidationMengnan Ke0https://orcid.org/0000-0001-8235-9559Mitsuru Takenaka1Shinichi Takagi2Department of Electrical Engineering and Information Systems, University of Tokyo, Tokyo, JapanDepartment of Electrical Engineering and Information Systems, University of Tokyo, Tokyo, JapanDepartment of Electrical Engineering and Information Systems, University of Tokyo, Tokyo, JapanFor realizing of Ge complementary metal-oxide-semiconductor with a Ge gate stack with thin equivalent oxide thickness, low interface state density (D<sub>it</sub>) and high reliability. In this paper, we examine the slow trap behaviors in the ALD high-k materials including Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, and La<sub>2</sub>O<sub>3</sub> on GeO<sub>x</sub>/Ge interfaces, where the GeOx interfacial layers are formed by plasma pre-oxidation. The C-V curves, Dit and slow trap density of the high-k/GeO<sub>x</sub>/nand pGe MOS capacitors are evaluated and compared. The Ge 3d spectra in X-ray photoemission spectroscopy are also compared among the Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, and La<sub>2</sub>O<sub>3</sub> on GeO<sub>x</sub>/Ge structures. It is found that Al<sub>2</sub>O<sub>3</sub> provides the lowest slow trap density for both electrons and holes in comparison with Y<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, and La<sub>2</sub>O<sub>3</sub> high-k films, while similar D<sub>it</sub> values are observed among the MOS interfaces with Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, and La<sub>2</sub>O<sub>3</sub>. The additional slow traps in the MOS capacitors with Y<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, and La<sub>2</sub>O<sub>3</sub> are attributable to any defects in the high-k films and/or the interfaces with GeO<sub>x</sub>.https://ieeexplore.ieee.org/document/8330012/Slow trap densityGeMOS interfacesplasma oxidationALD high-k films |
| spellingShingle | Mengnan Ke Mitsuru Takenaka Shinichi Takagi Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO<sub>x</sub> Interfacial Layers Formed by Plasma Pre-Oxidation IEEE Journal of the Electron Devices Society Slow trap density Ge MOS interfaces plasma oxidation ALD high-k films |
| title | Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO<sub>x</sub> Interfacial Layers Formed by Plasma Pre-Oxidation |
| title_full | Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO<sub>x</sub> Interfacial Layers Formed by Plasma Pre-Oxidation |
| title_fullStr | Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO<sub>x</sub> Interfacial Layers Formed by Plasma Pre-Oxidation |
| title_full_unstemmed | Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO<sub>x</sub> Interfacial Layers Formed by Plasma Pre-Oxidation |
| title_short | Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeO<sub>x</sub> Interfacial Layers Formed by Plasma Pre-Oxidation |
| title_sort | impact of atomic layer deposition high k films on slow trap density in ge mos interfaces with geo sub x sub interfacial layers formed by plasma pre oxidation |
| topic | Slow trap density Ge MOS interfaces plasma oxidation ALD high-k films |
| url | https://ieeexplore.ieee.org/document/8330012/ |
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