Demonstration of HfO<sub>2</sub>-Based Gate Dielectric With &#x007E;0.8-nm Equivalent Oxide Thickness on Si<sub>0.8</sub>Ge<sub>0.2</sub> by Trimethylaluminum Pre-Treatment and Al Scavenger

Demonstration of HfO<sub>2</sub>-Based Gate Dielectric With &#x007E;0.8-nm Equivalent Oxide Thickness on Si<sub>0.8</sub>Ge<sub>0.2</sub> by Trimethylaluminum Pre-Treatment and Al Scavenger

We disclosed HfO2-based dielectric of superb electrical properties on p-type Si0.8Ge0.2 substrate using an interfacial layer (IL) formed by trimethylaluminum (TMA) pre-treatment and Al scavenger. Our results revealed that the interface trap density (Dit) value and the gate leakage current (JG) could...

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Bibliographic Details
Main Authors: Meng-Chien Lee, Wei-Lun Chen, Yi-Yang Zhao, Shin-Yuan Wang, Guang-Li Luo, Chao-Hsin Chien
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Low EOT
Al scavenger
TMA pre-treatment
SiGe channel
Online Access:https://ieeexplore.ieee.org/document/10109810/

Internet

https://ieeexplore.ieee.org/document/10109810/

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