Demonstration of HfO<sub>2</sub>-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si<sub>0.8</sub>Ge<sub>0.2</sub> by Trimethylaluminum Pre-Treatment and Al Scavenger
We disclosed HfO2-based dielectric of superb electrical properties on p-type Si0.8Ge0.2 substrate using an interfacial layer (IL) formed by trimethylaluminum (TMA) pre-treatment and Al scavenger. Our results revealed that the interface trap density (Dit) value and the gate leakage current (JG) could...
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IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10109810/ |
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| author | Meng-Chien Lee Wei-Lun Chen Yi-Yang Zhao Shin-Yuan Wang Guang-Li Luo Chao-Hsin Chien |
| author_facet | Meng-Chien Lee Wei-Lun Chen Yi-Yang Zhao Shin-Yuan Wang Guang-Li Luo Chao-Hsin Chien |
| author_sort | Meng-Chien Lee |
| collection | DOAJ |
| description | We disclosed HfO2-based dielectric of superb electrical properties on p-type Si0.8Ge0.2 substrate using an interfacial layer (IL) formed by trimethylaluminum (TMA) pre-treatment and Al scavenger. Our results revealed that the interface trap density (Dit) value and the gate leakage current (JG) could be improved about 60 times and 100 times by tuning the gate electrode composition without sacrificing equivalent oxide thickness (EOT) performance. The mechanism underlying the <inline-formula> <tex-math notation="LaTeX">${\mathrm{ D}}_{\mathrm{ it}}$ </tex-math></inline-formula> improvement of the SiGe metal-oxide-semiconductor capacitors (MOSCAPs) might be owing to the Al metal scavenger and the minimization of the oxygen atoms diffusing to the high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula>/SiGe IL, verified by x-ray photoelectron spectroscopy (XPS) analyses. In addition, the hysteresis levels of SiGe capacitors with various gate electrodes were measured to find out the optimized configuration of metal electrodes. This work demonstrated the Al scavenger effect from the aspects of both material and electrical properties and achieved an impressive EOT value of <inline-formula> <tex-math notation="LaTeX">$\sim 0.8$ </tex-math></inline-formula>nm for the capacitors fabricated on the SiGe substrate. |
| first_indexed | 2024-03-08T10:31:11Z |
| format | Article |
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| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-08T10:31:11Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-3013eae286fa488392e76d59a2fcf29e2024-01-27T00:01:25ZengIEEEIEEE Journal of the Electron Devices Society2168-67342023-01-011127428110.1109/JEDS.2023.327106310109810Demonstration of HfO<sub>2</sub>-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si<sub>0.8</sub>Ge<sub>0.2</sub> by Trimethylaluminum Pre-Treatment and Al ScavengerMeng-Chien Lee0https://orcid.org/0000-0003-0397-6335Wei-Lun Chen1Yi-Yang Zhao2Shin-Yuan Wang3https://orcid.org/0000-0002-5928-2212Guang-Li Luo4https://orcid.org/0000-0001-9429-4342Chao-Hsin Chien5https://orcid.org/0000-0002-6698-6752Department of Electronics Engineering, National Chiao Tung University, Hsinchu, TaiwanDepartment of Electronics Engineering, National Chiao Tung University, Hsinchu, TaiwanDepartment of Electronics Engineering, National Chiao Tung University, Hsinchu, TaiwanDepartment of Electronics Engineering, National Chiao Tung University, Hsinchu, TaiwanTaiwan Semiconductor Research Institute, Hsinchu, TaiwanDepartment of Electronics Engineering, National Chiao Tung University, Hsinchu, TaiwanWe disclosed HfO2-based dielectric of superb electrical properties on p-type Si0.8Ge0.2 substrate using an interfacial layer (IL) formed by trimethylaluminum (TMA) pre-treatment and Al scavenger. Our results revealed that the interface trap density (Dit) value and the gate leakage current (JG) could be improved about 60 times and 100 times by tuning the gate electrode composition without sacrificing equivalent oxide thickness (EOT) performance. The mechanism underlying the <inline-formula> <tex-math notation="LaTeX">${\mathrm{ D}}_{\mathrm{ it}}$ </tex-math></inline-formula> improvement of the SiGe metal-oxide-semiconductor capacitors (MOSCAPs) might be owing to the Al metal scavenger and the minimization of the oxygen atoms diffusing to the high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula>/SiGe IL, verified by x-ray photoelectron spectroscopy (XPS) analyses. In addition, the hysteresis levels of SiGe capacitors with various gate electrodes were measured to find out the optimized configuration of metal electrodes. This work demonstrated the Al scavenger effect from the aspects of both material and electrical properties and achieved an impressive EOT value of <inline-formula> <tex-math notation="LaTeX">$\sim 0.8$ </tex-math></inline-formula>nm for the capacitors fabricated on the SiGe substrate.https://ieeexplore.ieee.org/document/10109810/Low EOTAl scavengerTMA pre-treatmentSiGe channel |
| spellingShingle | Meng-Chien Lee Wei-Lun Chen Yi-Yang Zhao Shin-Yuan Wang Guang-Li Luo Chao-Hsin Chien Demonstration of HfO<sub>2</sub>-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si<sub>0.8</sub>Ge<sub>0.2</sub> by Trimethylaluminum Pre-Treatment and Al Scavenger IEEE Journal of the Electron Devices Society Low EOT Al scavenger TMA pre-treatment SiGe channel |
| title | Demonstration of HfO<sub>2</sub>-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si<sub>0.8</sub>Ge<sub>0.2</sub> by Trimethylaluminum Pre-Treatment and Al Scavenger |
| title_full | Demonstration of HfO<sub>2</sub>-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si<sub>0.8</sub>Ge<sub>0.2</sub> by Trimethylaluminum Pre-Treatment and Al Scavenger |
| title_fullStr | Demonstration of HfO<sub>2</sub>-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si<sub>0.8</sub>Ge<sub>0.2</sub> by Trimethylaluminum Pre-Treatment and Al Scavenger |
| title_full_unstemmed | Demonstration of HfO<sub>2</sub>-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si<sub>0.8</sub>Ge<sub>0.2</sub> by Trimethylaluminum Pre-Treatment and Al Scavenger |
| title_short | Demonstration of HfO<sub>2</sub>-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si<sub>0.8</sub>Ge<sub>0.2</sub> by Trimethylaluminum Pre-Treatment and Al Scavenger |
| title_sort | demonstration of hfo sub 2 sub based gate dielectric with x007e 0 8 nm equivalent oxide thickness on si sub 0 8 sub ge sub 0 2 sub by trimethylaluminum pre treatment and al scavenger |
| topic | Low EOT Al scavenger TMA pre-treatment SiGe channel |
| url | https://ieeexplore.ieee.org/document/10109810/ |
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