Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications
4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics. However, it weakens the static characteristics such as specific on-resistance and breakdown voltag...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-11-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/14/21/7305 |