Extraction of Nitride Trap Profile in 3-D NAND Flash Memory Using Intercell Program Pattern
The extraction of nitride trap density (<inline-formula> <tex-math notation="LaTeX">$N_{t}$ </tex-math></inline-formula>) filled with electrons emitted by thermal emission (TE) in the charge-trapping layer of 3-D NAND flash memory is demonstrated. The intercell prog...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9521868/ |