High-density G-centers, light-emitting point defects in silicon crystal
We propose a new method of creating light-emitting point defects, or G-centers, by modifying a silicon surface with hexamethyldisilazane followed by laser annealing of the surface region. This laser annealing process has two advantages: creation of highly dense G-centers by incorporating carbon atom...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2011-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3624905 |