Effects of damages induced by indium-tin-oxide reactive plasma deposition on minority carrier lifetime in silicon crystal
A reactive-plasma deposition (RPD) process damage is evaluated for an indium-tin-oxide (ITO)/SiO2/Si structure in terms of the recombination properties at the interface. To calculate the surface recombination velocity (SRV), the defect density at the SiO2/Si interface (Dit), the effective total char...
| Auteurs principaux: | , , , , |
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| Format: | Article |
| Langue: | English |
| Publié: |
AIP Publishing LLC
2019-10-01
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| Collection: | AIP Advances |
| Accès en ligne: | http://dx.doi.org/10.1063/1.5124903 |