Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy
<p>Abstract</p> <p>We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron mi...
| मुख्य लेखकों: | , , , , , |
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| स्वरूप: | लेख |
| भाषा: | English |
| प्रकाशित: |
SpringerOpen
2011-01-01
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| श्रृंखला: | Nanoscale Research Letters |
| ऑनलाइन पहुंच: | http://www.nanoscalereslett.com/content/6/1/113 |