Accurate and Effective Nonlinear Behavioral Modeling of a 10-W GaN HEMT Based on LSTM Neural Networks

Accurate and Effective Nonlinear Behavioral Modeling of a 10-W GaN HEMT Based on LSTM Neural Networks

This paper presents a novel nonlinear behavioral modeling methodology based on long-short-term memory (LSTM) networks for gallium nitride (GaN) high-electron-mobility transistors (HEMTs). There are both theoretical foundations and practical implementations of the modeling procedure provided in this...

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Bibliographic Details
Main Authors: Mingqiang Geng, Giovanni Crupi, Jialin Cai
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Behavioral modeling
black box model
gallium nitride (GaN)
high-electron-mobility transistor (HEMT)
long-short term memory (LSTM)
microwave frequency
Online Access:https://ieeexplore.ieee.org/document/10075428/

Internet

https://ieeexplore.ieee.org/document/10075428/

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