Stimulated Emission from InAs (GaAs) Monolayers Stacks Embedded in Al0.33Ga0.67As Ective Region

Stimulated Emission from InAs (GaAs) Monolayers Stacks Embedded in Al0.33Ga0.67As Ective Region

Our study is focused on the optical and electronic properties of InAs (GaAs) monolayers embedded in Al0.33GA0.67As barrier layers investigated by temperature dependencies of electroluminescence spectra. The experimental results obtained from low temperature electroluminescence measurements of InAs (...

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Bibliographic Details
Main Authors: Dusan Pudis, Jaroslav Kovac, Jan Jakabovic, Andrej Vincze, Sieler Gottschalch, Gabriele Benndorf, Bernd Rheinländer, Reinhard Schwabe
Format: Article
Language:English
Published: VSB-Technical University of Ostrava 2002-01-01
Series:Advances in Electrical and Electronic Engineering
Subjects:
stimulated emission
electroluminescence spectra.
Online Access:http://advances.utc.sk/index.php/AEEE/article/view/355

Internet

http://advances.utc.sk/index.php/AEEE/article/view/355

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