An ultra high-endurance memristor using back-end-of-line amorphous SiC

An ultra high-endurance memristor using back-end-of-line amorphous SiC

Abstract Integrating resistive memory or neuromorphic memristors into mainstream silicon technology can be substantially facilitated if the memories are built in the back-end-of-line (BEOL) and stacked directly above the logic circuitries. Here we report a promising memristor employing a plasma-enha...

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Bibliographic Details
Main Authors: Omesh Kapur, Dongkai Guo, Jamie Reynolds, Daniel Newbrook, Yisong Han, Richard Beanland, Liudi Jiang, C. H. Kees de Groot, Ruomeng Huang
Format: Article
Language:English
Published: Nature Portfolio 2024-06-01
Series:Scientific Reports
Subjects:
Memristor
SiC
Back-end-of-line
PECVD
Endurance
Online Access:https://doi.org/10.1038/s41598-024-64499-2

Internet

https://doi.org/10.1038/s41598-024-64499-2

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