The Roadmap of 2D Materials and Devices Toward Chips

Highlights This review introduces the potential of 2D electronics for post-Moore era and discusses their current progress in digital circuits, analog circuits, heterogeneous integration, sensing circuits, artificial intelligence chips, and quantum chips in sequence. A comprehensive analysis of the c...

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Main Authors: Anhan Liu, Xiaowei Zhang, Ziyu Liu, Yuning Li, Xueyang Peng, Xin Li, Yue Qin, Chen Hu, Yanqing Qiu, Han Jiang, Yang Wang, Yifan Li, Jun Tang, Jun Liu, Hao Guo, Tao Deng, Songang Peng, He Tian, Tian-Ling Ren
Format: Article
Language:English
Published: SpringerOpen 2024-02-01
Series:Nano-Micro Letters
Subjects:
Online Access:https://doi.org/10.1007/s40820-023-01273-5
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author Anhan Liu
Xiaowei Zhang
Ziyu Liu
Yuning Li
Xueyang Peng
Xin Li
Yue Qin
Chen Hu
Yanqing Qiu
Han Jiang
Yang Wang
Yifan Li
Jun Tang
Jun Liu
Hao Guo
Tao Deng
Songang Peng
He Tian
Tian-Ling Ren
author_facet Anhan Liu
Xiaowei Zhang
Ziyu Liu
Yuning Li
Xueyang Peng
Xin Li
Yue Qin
Chen Hu
Yanqing Qiu
Han Jiang
Yang Wang
Yifan Li
Jun Tang
Jun Liu
Hao Guo
Tao Deng
Songang Peng
He Tian
Tian-Ling Ren
author_sort Anhan Liu
collection DOAJ
description Highlights This review introduces the potential of 2D electronics for post-Moore era and discusses their current progress in digital circuits, analog circuits, heterogeneous integration, sensing circuits, artificial intelligence chips, and quantum chips in sequence. A comprehensive analysis of the current trends and challenges encountered in the development of 2D materials is summarized. An in-depth roadmap outlining the future development of 2D electronics is presented, and the most accessible and promising avenues for 2D electronics are suggested.
first_indexed 2024-03-07T14:45:28Z
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spelling doaj.art-310f190895b3498ea432b3ebb33253d32024-03-05T20:01:03ZengSpringerOpenNano-Micro Letters2311-67062150-55512024-02-0116119610.1007/s40820-023-01273-5The Roadmap of 2D Materials and Devices Toward ChipsAnhan Liu0Xiaowei Zhang1Ziyu Liu2Yuning Li3Xueyang Peng4Xin Li5Yue Qin6Chen Hu7Yanqing Qiu8Han Jiang9Yang Wang10Yifan Li11Jun Tang12Jun Liu13Hao Guo14Tao Deng15Songang Peng16He Tian17Tian-Ling Ren18School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua UniversitySchool of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua UniversitySchool of Microelectronics, Fudan UniversitySchool of Electronic and Information Engineering, Beijing Jiaotong UniversityHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of SciencesState Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of ChinaState Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of ChinaHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of SciencesHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of SciencesSchool of Microelectronics, Fudan UniversitySchool of Microelectronics, Fudan UniversitySchool of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua UniversityState Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of ChinaState Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of ChinaState Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of ChinaSchool of Electronic and Information Engineering, Beijing Jiaotong UniversityHigh-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of SciencesSchool of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua UniversitySchool of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua UniversityHighlights This review introduces the potential of 2D electronics for post-Moore era and discusses their current progress in digital circuits, analog circuits, heterogeneous integration, sensing circuits, artificial intelligence chips, and quantum chips in sequence. A comprehensive analysis of the current trends and challenges encountered in the development of 2D materials is summarized. An in-depth roadmap outlining the future development of 2D electronics is presented, and the most accessible and promising avenues for 2D electronics are suggested.https://doi.org/10.1007/s40820-023-01273-5Two-dimensional materialsRoadmapIntegrated circuitsPost-Moore era
spellingShingle Anhan Liu
Xiaowei Zhang
Ziyu Liu
Yuning Li
Xueyang Peng
Xin Li
Yue Qin
Chen Hu
Yanqing Qiu
Han Jiang
Yang Wang
Yifan Li
Jun Tang
Jun Liu
Hao Guo
Tao Deng
Songang Peng
He Tian
Tian-Ling Ren
The Roadmap of 2D Materials and Devices Toward Chips
Nano-Micro Letters
Two-dimensional materials
Roadmap
Integrated circuits
Post-Moore era
title The Roadmap of 2D Materials and Devices Toward Chips
title_full The Roadmap of 2D Materials and Devices Toward Chips
title_fullStr The Roadmap of 2D Materials and Devices Toward Chips
title_full_unstemmed The Roadmap of 2D Materials and Devices Toward Chips
title_short The Roadmap of 2D Materials and Devices Toward Chips
title_sort roadmap of 2d materials and devices toward chips
topic Two-dimensional materials
Roadmap
Integrated circuits
Post-Moore era
url https://doi.org/10.1007/s40820-023-01273-5
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