Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂

Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂

We investigated the ferroelectric properties of self-induced HfGeO<sub>x</sub> in a HfO<sub>2</sub> film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric...

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Bibliographic Details
Main Authors: Chong-Jhe Sun, Yi-Ju Yao, Siao-Cheng Yan, Yi-Wen Lin, Shan-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
ITFET
GAAFET
Hf-germanate
negative capacitance (NC)
ferroelectric
short channel effect (SCE)
Online Access:https://ieeexplore.ieee.org/document/9785876/

Internet

https://ieeexplore.ieee.org/document/9785876/

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