Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂
We investigated the ferroelectric properties of self-induced HfGeO<sub>x</sub> in a HfO<sub>2</sub> film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9785876/ |
| _version_ | 1828821223569620992 |
|---|---|
| author | Chong-Jhe Sun Yi-Ju Yao Siao-Cheng Yan Yi-Wen Lin Shan-Wen Lin Fu-Ju Hou Guang-Li Luo Yung-Chun Wu |
| author_facet | Chong-Jhe Sun Yi-Ju Yao Siao-Cheng Yan Yi-Wen Lin Shan-Wen Lin Fu-Ju Hou Guang-Li Luo Yung-Chun Wu |
| author_sort | Chong-Jhe Sun |
| collection | DOAJ |
| description | We investigated the ferroelectric properties of self-induced HfGeO<sub>x</sub> in a HfO<sub>2</sub> film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric Hf germanate. The proposed ferroelectric IT-GAAFET with short-channel (gate length = 60 nm) exhibited a steep average subthreshold slope of 53 mV/dec, a drain-induced barrier lowering of only 1.7 mV/V, and a high on-off current ratio of <inline-formula> <tex-math notation="LaTeX">$1.7 \times 10^{7}$ </tex-math></inline-formula>. The proposed ferroelectric IT-GAA field-effect transistor can be a candidate for the sub-N3 technology node and ultralow-power, high-performance applications. |
| first_indexed | 2024-12-12T12:50:18Z |
| format | Article |
| id | doaj.art-311a0af233af47548e8ad89f5cbad34c |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-12T12:50:18Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-311a0af233af47548e8ad89f5cbad34c2022-12-22T00:24:01ZengIEEEIEEE Journal of the Electron Devices Society2168-67342022-01-011040841210.1109/JEDS.2022.31794659785876Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂Chong-Jhe Sun0https://orcid.org/0000-0003-2856-7458Yi-Ju Yao1Siao-Cheng Yan2https://orcid.org/0000-0002-1030-3481Yi-Wen Lin3Shan-Wen Lin4Fu-Ju Hou5https://orcid.org/0000-0001-8288-2542Guang-Li Luo6https://orcid.org/0000-0001-9429-4342Yung-Chun Wu7https://orcid.org/0000-0001-9409-6792Department of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanTaiwan Semiconductor Research Institute, Hsinchu, TaiwanTaiwan Semiconductor Research Institute, Hsinchu, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanWe investigated the ferroelectric properties of self-induced HfGeO<sub>x</sub> in a HfO<sub>2</sub> film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric Hf germanate. The proposed ferroelectric IT-GAAFET with short-channel (gate length = 60 nm) exhibited a steep average subthreshold slope of 53 mV/dec, a drain-induced barrier lowering of only 1.7 mV/V, and a high on-off current ratio of <inline-formula> <tex-math notation="LaTeX">$1.7 \times 10^{7}$ </tex-math></inline-formula>. The proposed ferroelectric IT-GAA field-effect transistor can be a candidate for the sub-N3 technology node and ultralow-power, high-performance applications.https://ieeexplore.ieee.org/document/9785876/ITFETGAAFETHf-germanatenegative capacitance (NC)ferroelectricshort channel effect (SCE) |
| spellingShingle | Chong-Jhe Sun Yi-Ju Yao Siao-Cheng Yan Yi-Wen Lin Shan-Wen Lin Fu-Ju Hou Guang-Li Luo Yung-Chun Wu Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂ IEEE Journal of the Electron Devices Society ITFET GAAFET Hf-germanate negative capacitance (NC) ferroelectric short channel effect (SCE) |
| title | Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂ |
| title_full | Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂ |
| title_fullStr | Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂ |
| title_full_unstemmed | Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂ |
| title_short | Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂ |
| title_sort | investigation of sige si bilayer inverted t channel gate all around field effect transistor with self induced ferroelectric ge doped hfo x2082 |
| topic | ITFET GAAFET Hf-germanate negative capacitance (NC) ferroelectric short channel effect (SCE) |
| url | https://ieeexplore.ieee.org/document/9785876/ |
| work_keys_str_mv | AT chongjhesun investigationofsigesibilayerinvertedtchannelgateallaroundfieldeffecttransistorwithselfinducedferroelectricgedopedhfox2082 AT yijuyao investigationofsigesibilayerinvertedtchannelgateallaroundfieldeffecttransistorwithselfinducedferroelectricgedopedhfox2082 AT siaochengyan investigationofsigesibilayerinvertedtchannelgateallaroundfieldeffecttransistorwithselfinducedferroelectricgedopedhfox2082 AT yiwenlin investigationofsigesibilayerinvertedtchannelgateallaroundfieldeffecttransistorwithselfinducedferroelectricgedopedhfox2082 AT shanwenlin investigationofsigesibilayerinvertedtchannelgateallaroundfieldeffecttransistorwithselfinducedferroelectricgedopedhfox2082 AT fujuhou investigationofsigesibilayerinvertedtchannelgateallaroundfieldeffecttransistorwithselfinducedferroelectricgedopedhfox2082 AT guangliluo investigationofsigesibilayerinvertedtchannelgateallaroundfieldeffecttransistorwithselfinducedferroelectricgedopedhfox2082 AT yungchunwu investigationofsigesibilayerinvertedtchannelgateallaroundfieldeffecttransistorwithselfinducedferroelectricgedopedhfox2082 |