Total Ionizing Dose Effects of <sup>60</sup>Co γ-Ray Radiation on Split-Gate SiC MOSFETs
SiC power devices require resistance to both single-event effects (SEEs) and total ionizing dose effects (TIDs) in a space radiation environment. The split-gate-enhanced VDMOSFET (SGE-VDMOSFET) process can effectively enhance the radiation resistance of SiC VDMOS, but it has a certain impact on the...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-05-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/11/2398 |