Total Ionizing Dose Effects of <sup>60</sup>Co γ-Ray Radiation on Split-Gate SiC MOSFETs

Total Ionizing Dose Effects of <sup>60</sup>Co γ-Ray Radiation on Split-Gate SiC MOSFETs

SiC power devices require resistance to both single-event effects (SEEs) and total ionizing dose effects (TIDs) in a space radiation environment. The split-gate-enhanced VDMOSFET (SGE-VDMOSFET) process can effectively enhance the radiation resistance of SiC VDMOS, but it has a certain impact on the...

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Bibliographic Details
Main Authors:	Haonan Feng, Xiaowen Liang, Xiaojuan Pu, Yutang Xiang, Teng Zhang, Ying Wei, Jie Feng, Jing Sun, Dan Zhang, Yudong Li, Xuefeng Yu, Qi Guo
Format:	Article
Language:	English
Published:	MDPI AG 2023-05-01
Series:	Electronics
Subjects:	split-gate-enhanced VDMOSFET planar gate VDMOSFET total ionizing dose effect long-term reliability
Online Access:	https://www.mdpi.com/2079-9292/12/11/2398

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