High Performance GaN-Based Ultraviolet Photodetector via Te/Metal Electrodes
Photodetectors (PDs) based on two-dimensional (2D) materials have promising applications in modern electronics and optoelectronics. However, due to the intralayer recombination of the photogenerated carriers and the inevitable surface trapping stages of the constituent layers, the PDs based on 2D ma...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-06-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/16/13/4569 |