Ge Ion Implanted Photonic Devices and Annealing for Emerging Applications

Ge Ion Implanted Photonic Devices and Annealing for Emerging Applications

Germanium (Ge) ion implantation into silicon waveguides will induce lattice defects in the silicon, which can eventually change the crystal silicon into amorphous silicon and increase the refractive index from 3.48 to 3.96. A subsequent annealing process, either by using an external laser or integra...

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Bibliographic Details
Main Authors: Xingshi Yu, Xia Chen, Milan M. Milosevic, Weihong Shen, Rob Topley, Bigeng Chen, Xingzhao Yan, Wei Cao, David J. Thomson, Shinichi Saito, Anna C. Peacock, Otto L. Muskens, Graham T. Reed
Format: Article
Language:English
Published: MDPI AG 2022-02-01
Series:Micromachines
Subjects:
silicon photonics
optical waveguide
Ge ion implantation
annealing
wafer-scale testing
post-fabrication trimming
Online Access:https://www.mdpi.com/2072-666X/13/2/291

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https://www.mdpi.com/2072-666X/13/2/291

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