DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions

DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions

p+-n-Diodes have been studied. The diodes were manufactured on wafers (thickness 460 μm, (111) plane) of uniformly phosphorus doped float-zone-grown single-crystal silicon. The resistivity of silicon was 90 Ω cm and the phosphorus concentration was 5×1013 cm−3. The diodes were irradiated with 250 Me...

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Bibliographic Details
Main Authors: Nikolai A. Poklonski, Nikolay I. Gorbachuk, Sergey V. Shpakovski, Viktor A. Filipenia, Arkady S. Turtsevich, Sergey V. Shvedov, Nha Vo Quang, Nguyen Thi Thanh Binh, Vladimir A. Skuratov, Andreas D. Wieck
Format: Article
Language:English
Published: Pensoft Publishers 2016-06-01
Series:Modern Electronic Materials
Subjects:
Deep-level transient spectroscopy
Irradiation-induced defects
Silicon
Diode
High energy ion implantation
Online Access:http://www.sciencedirect.com/science/article/pii/S2452177916300494

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http://www.sciencedirect.com/science/article/pii/S2452177916300494

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