Phase Transitions in Amorphous Germanium under Non-Hydrostatic Compression

Phase Transitions in Amorphous Germanium under Non-Hydrostatic Compression

As the pioneer semiconductor in transistor, germanium (Ge) has been widely applied in information technology for over half a century. Although many phase transitions in Ge have been reported, the complicated phenomena of the phase structures in amorphous Ge under extreme conditions are still not ful...

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Bibliographic Details
Main Authors: Jianing Xu, Lingkong Zhang, Hailun Wang, Yan Gao, Tingcha Wei, Resta A. Susilo, Congwen Zha, Bin Chen, Hongliang Dong, Zhiqiang Chen
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Crystals
Subjects:
shear effect
non-hydrostatic compression
DAC
phase transition
amorphous Ge
Online Access:https://www.mdpi.com/2073-4352/12/7/898

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https://www.mdpi.com/2073-4352/12/7/898

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