The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD

The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD

Abstract The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks after post-deposition annealing (PDA) at 800 °C com...

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Bibliographic Details
Main Authors: Xing-Yao Feng, Hong-Xia Liu, Xing Wang, Lu Zhao, Chen-Xi Fei, He-Lei Liu
Format: Article
Language:English
Published: SpringerOpen 2017-03-01
Series:Nanoscale Research Letters
Subjects:
La2O3
LaAlO3
Capacitance Property
Flat Band Voltage
Hafnium Oxide
Online Access:http://link.springer.com/article/10.1186/s11671-017-2004-1

Internet

http://link.springer.com/article/10.1186/s11671-017-2004-1

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