Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT process
Introduction: Monocrystal SiC is representative of the third generation semiconductor materials, the efficient process technology of 6H-SiC wafer have always been a hot topic. Developing a SPDT processing method based on brittle removal mode with controllable surface/subsurface damage is an importan...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-02-01
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| Series: | Journal of Advanced Research |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2090123223001108 |